
The M29W/M29DW series meets the most demanding needs of designers looking for densities from 4Mbit to 128Mbit, with the added advantages of ease of use and reliability.
The M29W Flash NOR family offers a wide range of automotive grade (AEC-Q100 compliant) devices.
The M29DW Flash NOR family features flexible partition Read-While-Write/Erase (RWW/E) operation. Read-While-Write/Erase operation allows data to be read from one bank, or group of banks while the other is written or erased
The memories are divided into blocks that can be erased independently to allow valid data to be preserved while old data is erased. M29 offers higher flexibility in code storage via both asymmetrical and symmetrical block architecture. In the first case, the memory array includes a Boot Block (at the Top or Bottom of the address space, to suit different microprocessors), a parameter and main blocks. In the symmetrical architecture the blocks have the same size. Each block can sustain over 100,000 program/erase cycles with 20 years data retention.
The M29 product family offers a wide range of package options including TSOP and FBGA.
| Features | Benefits |
| Density range: 4Mb-128Mb | Broad range to meet any design requirement |
| Packages: TSOP,BGA | Options to meet diverse application needs |
| Flexible partition Read-While-Write/Erase (RWW/E) operation | Allows data to be read from one bank, or group of banks while the other is written or erased |
| Voltage range: 2.7-3.6Volt | Full 3.3V voltage range |
| Page mode for 128Mb | Allows for faster read operations |
| 12V Vpp programming | Allows for faster programming operations |
| Block sector locking | Protection level against accidental modification |
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